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High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O3 thin film grown on Si substrate

English (英語)

Applied Physics Letters

121(16)

161901

AIP Publishing

2022-10-17

2022-10-31

For a high power density in piezoelectric energy harvesters, both a large direct piezoelectric coefficient (e31,f) and a small relative permittivity constant (εr,33) are required. This study proposed an energy harvesting device made of an epitaxial Pb(Zr, Ti)O3 (PZT) thin film grown on a Si substrate. The epitaxial PZT thin film is deposited on the Si substrate by RF magnetron sputtering. The epitaxial PZT thin film grown on Si substrate has a εr,33 constant of 318. The output voltage as a function of input displacement was measured using a shaker to evaluate the direct e31,f coefficients and energy harvester output characteristics. According to the figure of merit defined as (e31,f)2/ε0εr,33, the epitaxial PZT/Si cantilever is 32 GPa. At a resonant frequency of 373 Hz under an acceleration of 11 m/s2, the epitaxial PZT/Si cantilever has a high output power of 40.93 μW and power density of 108.3 μW/cm2/g2 without any damage, which is very promising for high power energy harvester applications.

学術雑誌論文

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Eun-Ji Kim, Sang-Hyo Kweon, Sahn Nahm, Yukio Sato, Goon Tan, and Isaku Kanno, "High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O3 thin film grown on Si substrate", Appl. Phys. Lett. 121, 161901 (2022) ] and may be found at https://doi.org/10.1063/5.0105103