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Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs

English (英語)

Physical Review B

77(19)

193102-193102

American Physical Society (APS)

2008-05

2008-07-18

We have studied the fine structure polarization splitting of exciton emission lines related to isoelectronic centers in an nitrogen-doped GaAs. The nitrogen doping has been performed in atomically controlled way using the (3×3) nitrogen stable surface of GaAs(001), which forms a series of distinct, strong, narrow bandwidth luminescence lines. The localized bound excitons have been found to consist of four signals, which can be selected by linear polarization. Magnetic-field-induced change in the splitting shows a quadratic dependence of the bright exciton splitting owing to the in-plane Zeeman interaction. Our calculations of the optical selection characteristics considering both the 𝐽−𝐽 coupling and local-field effects demonstrate the polarization splitting depending on the symmetry of the isoelectronic center.

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