神戸大学附属図書館デジタルアーカイブ
https://hdl.handle.net/20.500.14094/90008038

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メタデータID
90008038
アクセス権
open access
出版タイプ
Accepted Manuscript
タイトル
Wavelength-dependent near-infrared microbolometer for short-wavelength infrared light with gold nanowire grating optical absorber
著者
Tsubota, Tatsuya ; Uesugi, Akio ; Sugano, Koji ; Isono, Yoshitada
著者名
Tsubota, Tatsuya
著者ID
A2319
研究者ID
1000090821710
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=a7e66e30711037db520e17560c007669
著者名
Uesugi, Akio
上杉, 晃生
ウエスギ, アキオ
所属機関名
工学研究科
著者ID
A0415
研究者ID
1000020372568
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=f58266fb6fc08c85520e17560c007669
著者名
Sugano, Koji
菅野, 公二
スガノ, コウジ
所属機関名
工学研究科
著者ID
A0959
研究者ID
1000020257819
KUID
https://kuid-rm-web.ofc.kobe-u.ac.jp/search/detail?systemId=1a123053631d4449520e17560c007669
著者名
Isono, Yoshitada
磯野, 吉正
イソノ, ヨシタダ
所属機関名
工学研究科
言語
English (英語)
収録物名
Microsystem Technologies
巻(号)
27(3)
ページ
997-1005
出版者
Springer
刊行日
2021-03
公開日
2022-04-01
抄録
Near-infrared (NIR) imaging has been used for nondestructive and non-contact inspections in various areas, such as food and medicine inspections and medical diagnoses. The short-wavelength infrared light (SWIR) sensor currently used requires a Peltier cooler and a diffraction grating spectroscope owing to its detection principle. Thus, realizing a low-cost and miniaturized SWIR imaging device remains challenging and has limitations for practical applications. In this study, we propose a bolometer-type detector element fabricated using a silicon-on-insulator (SOI) wafer as a low cost and miniaturized SWIR image sensor element. We adopted gold (Au) nanowire grating structures coated with silicon as wavelength-dependent SWIR absorbers and aimed at wavelength-selectivity imaging without using a spectroscope. A device was designed and fabricated with Au nanowire grating structures on a doubly clamped Si beam using microelectromechanical system (MEMS)) technology. The electrical characteristics of the device were measured depending on device temperature and SWIR irradiation intensity. It was found that electrical resistance decreased linearly with increasing device temperature and SWIR irradiation intensity (wavelength at 1530 nm), as semiconductors have negative temperature coefficients of resistance. The results show similar trends from both finite element method (FEM) analysis and theoretical calculation. The resistances at wavelengths ranging from 1530 to 1565 nm at 5 nm increment were evaluated. It was confirmed that absorber-integrated bolometer device enabled wavelength-dependent response of the resistance according to the absorption spectrum.
カテゴリ
工学研究科
学術雑誌論文
権利
© Springer-Verlag GmbH Germany, part of Springer Nature 2020. This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature's AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s00542-020-05004-3
関連情報
DOI
https://doi.org/10.1007/s00542-020-05004-3